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PD -97156
IRFH5302PBF
HEXFET(R) Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
30 2.1 29 1.6 100h
V m nC A
PQFN 5X6 mm
Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25C)
Applications
* OR-ing MOSFET for 12V (typical) Bus in-Rush Current * Synchronous MOSFET for buck converters * Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features Benefits
Low RDSon ( 2.1m) Low Thermal Resistance to PCB ( 1.2C/W) 100% Rg tested Low Profile ( 0.9 mm) results in Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification
Lower Conduction Losses Enable better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Orderable part number IRFH5302TRPBF IRFH5302TR2PBF
Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm
Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400
Note
Absolute Maximum Ratings
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC(Bottom) = 25C ID @ TC(Bottom) = 100C IDM PD @TA = 25C PD @ TC(Bottom) = 25C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 30 20 32 26 100 100 400 3.6 100 0.029 -55 to + 150 Units V
g g
c
h h
A
W W/C C
Linear Derating Factor Operating Junction and Storage Temperature Range
g
Notes through are on page 8
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1
10/20/09
IRFH5302PBF
Static @ TJ = 25C (unless otherwise specified)
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 --- --- --- 1.35 --- --- --- --- --- 180 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.02 1.8 2.8 1.8 -6.8 --- --- --- --- --- 76 29 7.7 4.4 9.7 8.2 14 19 1.6 18 51 22 18 4400 890 360 Conditions Max. Units --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 50A 2.1 m VGS = 4.5V, ID = 50A 3.5 2.35 V VDS = VGS, ID = 100A --- mV/C VDS = 24V, VGS = 0V 5.0 A VDS = 24V, VGS = 0V, TJ = 125C 150 VGS = 20V 100 nA VGS = -20V -100 --- S VDS = 15V, ID = 50A --- nC VGS = 10V, VDS = 15V, ID = 50A 41 VDS = 15V --- VGS = 4.5V --- nC ID = 50A --- --- See Fig.17 & 18 --- --- nC VDS = 16V, VGS = 0V 2.5 VDD = 15V, VGS = 4.5V --- ID = 50A --- ns RG=1.8 --- --- See Fig.15 VGS = 0V --- pF VDS = 15V --- --- = 1.0MHz
e e
Avalanche Characteristics
EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current
d
Min. Typ.
Typ. --- ---
Max. 130 50
Units mJ A
Diode Characteristics
IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Conditions MOSFET symbol --- --- 100 showing the A G integral reverse --- --- 400 p-n junction diode. --- --- 1.0 V TJ = 25C, IS = 50A, VGS = 0V --- 20 30 ns TJ = 25C, IF = 50A, VDD = 15V --- 32 48 nC di/dt = 300A/s Time is dominated by parasitic Inductance Max. Units
h
D
e
S
eA
Thermal Resistance
RJC (Bottom) RJC (Top) RJA RJA (<10s) Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient
f f
Parameter
g g
Typ. --- --- --- ---
Max. 1.2 15 35 22
Units C/W
2
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IRFH5302PBF
1000
TOP VGS 10V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V 2.5V
1000
TOP VGS 10V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V 2.5V
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
BOTTOM
BOTTOM
10
10
1
0.1 0.1 1
2.5 V 60s PULSE WIDTH Tj = 25C
10 100
2.5 V 60s PULSE WIDTH Tj = 150C
1 0.1 1 10 100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
Fig 2. Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
100
ID = 50A V GS = 10V
1.5
TJ = 150C
10
1
TJ = 25C
1.0
0.1
V DS = 15V 60s PULSE WIDTH
0.01 1.0 2.0 3.0 4.0 5.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
V GS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = Cds + C gd
Fig 4. Normalized On-Resistance Vs. Temperature
14 ID= 50A
V GS, Gate-to-Source Voltage (V)
12 10 8 6 4 2 0
V DS= 24V V DS= 15V
C, Capacitance (pF)
10000
Ciss
1000
Coss Crss
100 1 10 100
0
20
40
60
80
V DS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
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3
IRFH5302PBF
1000.0
10000
OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100.0
TJ = 150C
1000
100
1msec
100sec
10.0
TJ = 25C
1.0
10 10msec 1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100
V GS = 0V
0.1 0.2 0.4 0.6 0.8 1.0 1.2
0.1
V SD, Source-to-Drain Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
200 LIMITED BY PACKAGE 160
ID, Drain Current (A)
V GS(th) Gate threshold Voltage (V)
2.5 3.0
Fig 8. Maximum Safe Operating Area
ID = 1.0A ID = 1.0mA ID = 250A ID = 100A
120
2.0
80
1.5
40
1.0
0 25 50 75 100 125 150 TC, Case Temperature (C)
0.5 -75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( C )
Fig 9. Maximum Drain Current Vs. Case (Bottom) Temperature
10
Fig 10. Threshold Voltage Vs. Temperature
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10
0.1
0.05 0.02 0.01
0.01
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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RDS(on), Drain-to -Source On Resistance ( m)
IRFH5302PBF
6.0
600
ID = 50A
5.0
EAS, Single Pulse Avalanche Energy (mJ)
500
ID 8.7A TOP 16A BOTTOM 50A
400
4.0
300
3.0
TJ = 125C
200
2.0
100
TJ = 25C
1.0 2 4 6 8 10 12 14 16 18 20
0 25 50 75 100 125 150
V GS, Gate-to-Source Voltage (V)
Starting TJ, Junction Temperature (C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS tp
+ V - DD
A
I AS
0.01
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
VDS VGS RG V10V GS
Pulse Width 1 s Duty Factor 0.1
RD
VDS
90%
D.U.T.
+
-VDD
10%
VGS
td(on) tr td(off) tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
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IRFH5302PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Id Vds Vgs
D
L VCC DUT
0
G S
1K
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 17. Gate Charge Test Circuit
Fig 18. Gate Charge Waveform
6
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IRFH5302PBF
PQFN 5x6 Outline "B" Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL RECTIFIER LOGO
DATE CODE ASSEMBLY SITE CODE
(Per SCOP 200-002)
PIN 1 IDENTIFIER
XXXX XYWWX XXXXX
PART NUMBER
("4 or 5 digits")
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFH5302PBF
PQFN Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Qualification information
Qualification level Moisture Sensitivity Level RoHS compliant PQFN 5mm x 6mm Yes Indus trial (per JE DE C JE S D47F

guidelines ) MS L1
(per JE DE C J-S T D-020D
)

Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.103mH, RG = 25, IAS = 50A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/2009
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